lds - 0016 - 2, rev . 1 (111616) ?2011 microsemi corporation page 1 of 6 2n3506u4 thru 2n3507au4 available on commercial versions npn med ium power silicon transistor qualified per mil - prf - 19500/3 49 qualified levels : jan, jantx and jantxv description this family of high - fr equency, epitaxial planar transistors feature low saturation voltage. the u4 package is hermetically sealed and provides a low profile for minimizing board height. the 'a' version maintains it's forward current transfer ratio, h fe , at low temperature at higher collector - emitter voltage. these devices also available in to - 5 and to - 39 packages . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. u4 package also available in : to - 39 package (leaded) 2n3506 C 2n3507a to - 5 package (leaded) 2n3506l C 2n3507al important: for the latest information, visit our website http://www.m icrosemi.com . features ? jedec registered 2n3 506 u4 through 2n3 507 u4 series. ? rohs compliant versions available (commercial grade only). ? vce(sat) = 0.5 v @ ic = 500 ma ? rise time t r = 30 n s max @ i c = 1.5 a, i b1 = 150 ma ? fall time t f = 35 n s max @ i c = 1 .5 a, i b1 = i b2 = 150 ma applications / benefits ? general purpose transistors for medium power applications requiring high frequency swit ching and low package profile. ? military and other high - reliability applications . maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3 506 u4 2n3 507 u4 unit colle ctor - emitter voltage v ceo 40 50 v collector - base voltage v cbo 60 80 v emitter - base voltage v ebo 5.0 v collector current i c 3.0 a total power dissipation @ t a = +25 c (1) @ t c = +100 c (2) p d 1 .0 5 .0 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly 5.7 1 mw/c for t a > +25 c. 2. vce = 40v . downloaded from: http:///
lds - 0016 - 2, rev . 1 (111616) ?2011 microsemi corporation page 2 of 6 2n3506u4 thru 2n3507au4 mechanical and packaging ? case: hermetically sealed, aluminum nitride (aln) ceramic body with gold over nickel pl ated kovar lid. ? terminals: gold over nickel plated surface mount terminations ? marking: part number, date code, manufacturers id ? polarity: see package dimensions ? tape & reel option: standard per eia - 481d . ? weight: .125 grams (125 milligrams) . ? see p acka ge d imensions on last page. part nomenclature jan 2n3 506 a u4 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = c ommercial jedec type number (s ee electrical char acteristics table ) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant package type u4 = surface mount level improvement a = maintains h fe @ - 55c at higher v ce symbols & definitions symbol def inition c obo common - base open - circuit output capacitance i c c ollector current, dc i ceo c ollector cutoff current, base open i cex c ollector cutoff current, circuit between base and emitter i ebo emitter cutoff current, collector open h fe c ommon - emitter static forward current transfer ratio v be base - emitter voltage, dc v ce collector - emitter voltage, dc v ceo collector - emitter voltage, base open v cbo collector - emitter voltage, emitter open v eb emitter - base voltage, dc v ebo emitter - base voltage, collector open downloaded from: http:///
lds - 0016 - 2, rev . 1 (111616) ?2011 microsemi corporation page 3 of 6 2n3506u4 thru 2n3507au4 electrical characteristics (t a = +25c, unless otherwise noted) off characteristics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage 2n3506u4 i c = 10 ma 2N3507U4 v (br)ceo 40 50 v collector - emitter cutoff current i cex 1.0 1.0 a v ce = 40 v v ce = 60 v 2n3506 u4 2n3507 u4 collector - base breakdown voltage i c = 100 a 2n3506 u4 2n3507 u4 v (br)cbo 60 80 v emitter - base breakdown voltage i e = 10 a v (br)ebo 5 v on characteristics (3 ) parameters / test conditions symbol min. max. unit forward- current transfer ratio i c = 500 ma, v ce = 1 v 2n3506 u4 2n3507 u4 h fe 50 35 250 175 forward- current transfer ratio i c = 1.5 a, v ce = 2 v 2n3506 u4 2n3507 u4 h fe 40 30 200 150 forward- current transfer ratio i c = 2.5 a, v ce = 3 v 2n3506 u4 2n3507 u4 h fe 30 25 forward- current transfer ratio i c = 3.0 a, v ce = 5 v 2n3506 u4 2n3507 u4 h fe 25 20 forward- current transfer ratio i c = 500 ma, v ce = 1.0 v @ - 55 c 2n3506u4 2N3507U4 h fe 25 17 forward- current transfer ratio i c = 500 ma, v ce = 2.0 v @ - 55 c 2n3506au4 2n3507au4 h fe 25 17 collector - emitter saturation voltage i c = 500 ma, i b = 50 ma v ce(sat) 0.5 v collector - emitter saturation voltage i c = 1.5 a, i b = 150 ma v ce(sat) 1.0 v collector - emitter saturation voltage i c = 2.5 a, i b = 250 ma v ce(sat) 1.5 v base- emitter saturation voltage i c = 500 ma, i b = 50 ma v be(sat) 1.0 v base- emitter saturation voltage i c = 1.5 a, i b = 150 ma v be(sat) 0.8 1.3 v base- emitter satu ration voltage i c = 2.5 a, i b = 250 ma v be(sat) 2.0 v downloaded from: http:///
lds - 0016 - 2, rev . 1 (111616) ?2011 microsemi corporation page 4 of 6 2n3506u4 thru 2n3507au4 electrical characteristics (t a = +25c, unless otherwise noted) dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short - circu it forward current transfer ratio i c = 100 ma, v ce = 5 v, f = 20 mhz |h fe | 3.0 15 output capacitance v cb = 10 v, i e = 0, 100 khz f 1.0 mhz c obo 40 pf input capacitance v eb = 3.0 v, i c = 0, 100 khz f 1.0 mhz c ibo 300 pf switching characteristics (4) parameters / test conditions symbol min. max. unit delay time i c = 1.5 a, i b1 = 150 ma t d 15 ns ri se time i c = 1.5 a, i b1 = 150 ma t r 30 ns storage time i c = 1.5 a, i b1 = i b2 = 150 ma t s 55 ns fall time i c = 1.5 a, i b1 = i b2 = 150 ma t f 35 ns notes: (3) pulse test: pu lse width = 300 s, duty cycle 2.0%. (4) consult mil - prf - 19500/349 f or additional i nfor m ation . downloaded from: http:///
lds - 0016 - 2, rev . 1 (111616) ?2011 microsemi corporation page 5 of 6 2n3506u4 thru 2n3507au4 graphs 0 1 2 3 4 5 6 25 50 75 100 125 150 175 200 225 =================== v ce = 4v v ce = 15v v ce = 60v =================== l egend (top to bottom) t c ( o c ) (case) figure 1 temperature - power derating curve notes: thermal resistance junction to case = 7.0 o c/w case mounted to infinite sink. time (s) figure 2 maximum thermal impedance (r ? jc ) dc operation maximum rating (w) theta ( o c /w) downloaded from: http:///
lds - 0016 - 2, rev . 1 (111616) ?2011 microsemi corporation page 6 of 6 2n3506u4 thru 2n3507au4 package dimensions notes: 1. dimensions are in inches. 2. millimeter equivalents are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inches millimeters mi n max min max bl 0 .215 0 .225 5.46 5.72 bw 0 .145 0 .155 3.68 3.94 ch 0 .049 0 .075 1.24 1.91 lh 0 .0 2 0.51 lw1 0 .135 0 .145 3.43 3.68 lw2 0 .047 0 .057 1.19 1.45 ll1 0. 08 5 0 .125 2.16 3.1 7 ll2 0 .045 0 .0 75 1.14 1. 90 ls1 0 .070 0 .095 1.78 2.41 ls2 0 .035 0 .048 0.89 1.2 1 q1 0 .0 3 0 .070 0.76 1.78 q2 0 .02 0 .035 0.51 0.8 8 terminal 1 collector 2 base 3 emitter downloaded from: http:///
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